STP6N52K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

70W Tc

Pulsed Drain Current-Max (IDM) :

20A

Threshold Voltage :

3.75V

Turn-Off Delay Time :

31 ns

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.5A, 10V

Mount :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

11ns

Radiation Hardening :

No

Length :

10.4mm

DS Breakdown Voltage-Min :

525V

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Additional Feature :

ULTRA-LOW RESISTANCE

Continuous Drain Current (ID) :

5A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

15.75mm

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Number of Elements :

1

Packaging :

Tube

Operating Temperature :

150°C TJ

REACH SVHC :

No SVHC

Drain Current-Max (Abs) (ID) :

5A

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

110 mJ

Terminal Finish :

Tin (Sn)

Series :

SuperMESH3™

Drain to Source Voltage (Vdss) :

525V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

3

FET Type :

N-Channel

Turn On Delay Time :

10 ns

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 50V

Base Part Number :

STP6N

Pin Count :

3

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Width :

4.6mm

Terminal Position :

Single

Fall Time (Typ) :

18 ns