STP6N120K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Length :

10.4mm

Transistor Application :

SWITCHING

Power Dissipation-Max :

150W Tc

Fall Time (Typ) :

32 ns

Lead Free :

Lead Free

Packaging :

Tube

Drain to Source Breakdown Voltage :

1.2kV

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Threshold Voltage :

4V

Drain to Source Voltage (Vdss) :

1200V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

6A

JEDEC-95 Code :

TO-220AB

Contact Plating :

Tin

Base Part Number :

STP6N

Continuous Drain Current (ID) :

6A

FET Type :

N-Channel

Element Configuration :

Single

Height :

19.68mm

Radiation Hardening :

No

JESD-609 Code :

e3

Series :

SuperMESH3™

Pulsed Drain Current-Max (IDM) :

20A

Pin Count :

3

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

5V @ 100µA

Number of Terminations :

3

Rise Time :

12ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Mount :

Through Hole

Power Dissipation :

150W

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 2.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 100V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

58 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.6mm

Number of Pins :

3

Max Junction Temperature (Tj) :

150°C

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Resistance :

1.95Ohm

Nominal Vgs :

4 V

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Turn On Delay Time :

30 ns