STI360N4F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

Not Applicable

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 60A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

17930pF @ 25V

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Power Dissipation-Max :

300W Tc

Continuous Drain Current (ID) :

120A

Vgs (Max) :

±20V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Drain to Source Voltage (Vdss) :

40V

Number of Channels :

1

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Series :

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

Gate Charge (Qg) (Max) @ Vgs :

340nC @ 10V

ECCN Code :

EAR99

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Base Part Number :

STI360N

Weight :

1.437803g

Mounting Type :

Through Hole