STI32N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Rise Time :

12ns

Drain-source On Resistance-Max :

0.119Ohm

Additional Feature :

AVALANCHE ENERGY RATED

ECCN Code :

EAR99

Length :

10.4mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Avalanche Energy Rating (Eas) :

650 mJ

Gate to Source Voltage (Vgs) :

25V

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

119m Ω @ 12A, 10V

Power Dissipation :

150W

Drain to Source Breakdown Voltage :

650V

JESD-609 Code :

e3

Operating Temperature :

150°C TJ

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3320pF @ 100V

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

150W Tc

Current - Continuous Drain (Id) @ 25°C :

24A Tc

FET Type :

N-Channel

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

96A

Width :

4.6mm

Turn-Off Delay Time :

53 ns

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Radiation Hardening :

No

Base Part Number :

STI32N

Continuous Drain Current (ID) :

24A

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Application :

SWITCHING

Pin Count :

3

Series :

MDmesh™ V

Height :

10.75mm

Number of Pins :

3

Fall Time (Typ) :

16 ns

Turn On Delay Time :

53 ns

Vgs (Max) :

±25V