STI30N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

22A

Rise Time :

8ns

Pulsed Drain Current-Max (IDM) :

88A

Turn-Off Delay Time :

50 ns

Additional Feature :

AVALANCHE ENERGY RATED

Threshold Voltage :

4V

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

139m Ω @ 11A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

FET Type :

N-Channel

Power Dissipation-Max :

140W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

REACH SVHC :

No SVHC

Terminal Finish :

Matte Tin (Sn)

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

650V

Number of Terminations :

3

Fall Time (Typ) :

10 ns

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Mount :

Through Hole

Height :

10.75mm

Gate to Source Voltage (Vgs) :

25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Number of Pins :

3

Avalanche Energy Rating (Eas) :

500 mJ

Power Dissipation :

140W

Input Capacitance (Ciss) (Max) @ Vds :

2880pF @ 100V

Number of Elements :

1

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Length :

10.4mm

Operating Temperature :

150°C TJ

Width :

4.6mm

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Turn On Delay Time :

50 ns

Series :

MDmesh™ V

Base Part Number :

STI30N

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Packaging :

Tube

Vgs (Max) :

±25V