STI33N65M2
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- Mfr.Part #
- STI33N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 24A I2PAK
- Stock
- 2,548
- In Stock ：
- 2,548
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 10.4mm
- Turn On Delay Time :
- 13.5 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 41.5nC @ 10V
- Series :
- MDmesh™ M2
- Pulsed Drain Current-Max (IDM) :
- 96A
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- DS Breakdown Voltage-Min :
- 650V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1790pF @ 100V
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 12A, 10V
- Height :
- 9.35mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 72.5 ns
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 25V
- Base Part Number :
- STI33N
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.14Ohm
- Vgs (Max) :
- ±25V
- Avalanche Energy Rating (Eas) :
- 780 mJ
- Drain to Source Voltage (Vdss) :
- 650V
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Power Dissipation-Max :
- 190W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Width :
- 4.6mm
- Continuous Drain Current (ID) :
- 24A
- Factory Lead Time :
- 16 Weeks
- Number of Terminations :
- 3
- Datasheets
- STI33N65M2
N-Channel Tube 140m Ω @ 12A, 10V ±25V 1790pF @ 100V 41.5nC @ 10V 650V TO-262-3 Long Leads, I2Pak, TO-262AA
STI33N65M2 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 780 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1790pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 24A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 72.5 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 96A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 13.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 650V in order to maintain normal operation.Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
STI33N65M2 Features
the avalanche energy rating (Eas) is 780 mJ
a continuous drain current (ID) of 24A
the turn-off delay time is 72.5 ns
based on its rated peak drain current 96A.
a 650V drain to source voltage (Vdss)
STI33N65M2 Applications
There are a lot of STMicroelectronics
STI33N65M2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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