STI33N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Mounting Type :

Through Hole

Power Dissipation-Max :

190W Tc

Drain to Source Voltage (Vdss) :

600V

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

109 ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Turn On Delay Time :

16 ns

Gate to Source Voltage (Vgs) :

25V

Weight :

2.084002g

RoHS Status :

ROHS3 Compliant

Base Part Number :

STI33N

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

9 ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Rds On (Max) @ Id, Vgs :

125m Ω @ 13A, 10V

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Rise Time :

9.6ns

ECCN Code :

EAR99

Number of Channels :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

26A

Gate Charge (Qg) (Max) @ Vgs :

45.5nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1781pF @ 100V

Factory Lead Time :

16 Weeks

Packaging :

Tube

Series :

MDmesh™ II Plus

Resistance :

108mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA