STI34N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

28A Tc

JEDEC-95 Code :

TO-262AA

Rds On (Max) @ Id, Vgs :

110m Ω @ 14A, 10V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

510 mJ

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

28A

Vgs (Max) :

±25V

Power Dissipation :

190W

Series :

MDmesh™ V

Pulsed Drain Current-Max (IDM) :

112A

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

650V

Transistor Element Material :

SILICON

Fall Time (Typ) :

7.5 ns

Terminal Position :

Single

ECCN Code :

EAR99

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

62.5nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-262-3 Full Pack, I2Pak

Drain-source On Resistance-Max :

0.11Ohm

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STI34N

Rise Time :

8.7ns

Power Dissipation-Max :

190W Tc

Packaging :

Tube

Number of Terminations :

3

Mounting Type :

Through Hole

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3