STI300N4F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.4mm

Base Part Number :

STI300N

Case Connection :

DRAIN

Mount :

Through Hole

FET Type :

N-Channel

Fall Time (Typ) :

95 ns

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 80A, 10V

Turn On Delay Time :

28 ns

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

640A

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Width :

4.6mm

Factory Lead Time :

20 Weeks

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Packaging :

Tube

Lead Free :

Lead Free

Pin Count :

3

Mounting Type :

Through Hole

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

13800pF @ 25V

Series :

DeepGATE™, STripFET™ VI

Number of Elements :

1

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain-source On Resistance-Max :

0.002Ohm

Power Dissipation-Max :

300W Tc

Transistor Application :

SWITCHING

Height :

9.35mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Rise Time :

98ns

Drain to Source Breakdown Voltage :

40V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

190 ns

Continuous Drain Current (ID) :

160A

Transistor Element Material :

SILICON