STGB7H60DF

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Mfr.Part #
STGB7H60DF
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
IGBT 600V 14A 88W D2PAK
Stock
981
In Stock :
981

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
RoHS Status :
ROHS3 Compliant
Collector Emitter Voltage (VCEO) :
1.95V
Gate Charge :
46nC
Mount :
Surface Mount
Input Type :
Standard
Test Condition :
400V, 7A, 47 Ω, 15V
Mounting Type :
Surface Mount
ECCN Code :
EAR99
Reverse Recovery Time :
136 ns
Current - Collector Pulsed (Icm) :
28A
Collector Emitter Breakdown Voltage :
600V
Max Breakdown Voltage :
600V
Base Part Number :
STGB7
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Max Power Dissipation :
88W
Operating Temperature :
-55°C~175°C TJ
Td (on/off) @ 25°C :
30ns/160ns
Packaging :
Cut Tape (CT)
Power - Max :
88W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vce(on) (Max) @ Vge, Ic :
1.95V @ 15V, 7A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
IGBT Type :
Trench Field Stop
Switching Energy :
99μJ (on), 100μJ (off)
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Max Collector Current :
14A
Datasheets
STGB7H60DF
Introducing Transistors - IGBTs - Single STMicroelectronics STGB7H60DF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Base Part Number:STGB7, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, STGB7H60DF pinout, STGB7H60DF datasheet PDF, STGB7H60DF amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGB7H60DF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGB7H60DF


STGB7H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGB7H60DF Description


STGB7H60DF is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate and field stop structure. It is able to provide low conduction and switching losses, which maximize the efficiency of very high-frequency converters. The easier paralleling operation can be achieved due to its positive VCE(sat) temperature coefficient and very tight parameter distribution.



STGB7H60DF Features


Advanced proprietary trench gate and field stop structure

Low conduction and switching losses

Positive VCE(sat) temperature coefficient 

Very tight parameter distribution

Package:  D2PAK



STGB7H60DF Applications


Motor control

UPS, PFC


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