STGB6NC60HT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

JESD-609 Code :

e3

Turn On Time :

17.3 ns

Packaging :

Tape and Reel (TR)

Gate Charge :

13.6nC

Pin Count :

3

Current - Collector Pulsed (Icm) :

21A

Test Condition :

390V, 3A, 10 Ω, 15V

Series :

PowerMESH™

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 3A

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

80W

Max Breakdown Voltage :

600V

Transistor Application :

POWER CONTROL

Turn Off Time-Nom (toff) :

222 ns

Gate-Emitter Thr Voltage-Max :

5.75V

Collector Emitter Voltage (VCEO) :

600V

Number of Elements :

1

Switching Energy :

20μJ (on), 68μJ (off)

Terminal Form :

Gull wing

Number of Pins :

3

Peak Reflow Temperature (Cel) :

245

Radiation Hardening :

No

Input Type :

Standard

Base Part Number :

STGB6

Element Configuration :

Single

Mounting Type :

Surface Mount

Current Rating :

15A

Max Power Dissipation :

56W

Gate-Emitter Voltage-Max :

20V

Collector Emitter Breakdown Voltage :

600V

Transistor Element Material :

SILICON

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

2.7V

Max Collector Current :

15A

Td (on/off) @ 25°C :

12ns/76ns

Voltage - Rated DC :

600V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)