STGB40V60F
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- Mfr.Part #
- STGB40V60F
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 600V 80A 283W D2PAK
- Stock
- 494
- In Stock ：
- 494
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Saturation Voltage :
- 1.8V
- Input Type :
- Standard
- Switching Energy :
- 456μJ (on), 411μJ (off)
- Max Breakdown Voltage :
- 600V
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge :
- 226nC
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 283W
- Max Power Dissipation :
- 283W
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Test Condition :
- 400V, 40A, 10 Ω, 15V
- IGBT Type :
- Trench Field Stop
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 600V
- Td (on/off) @ 25°C :
- 52ns/208ns
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 40A
- Weight :
- 2.000002g
- Collector Emitter Breakdown Voltage :
- 600V
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 80A
- Packaging :
- Cut Tape (CT)
- Base Part Number :
- STGB40
- Current - Collector Pulsed (Icm) :
- 160A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Factory Lead Time :
- 20 Weeks
- Datasheets
- STGB40V60F
STGB40V60F datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGB40V60F Description
These IGBTs were created employing a cutting-edge, exclusive trench gate field-stop construction. These parts are IGBTs from the V series, which offer the best balance between conduction and switching losses in order to increase the effectiveness of very high frequency converters. Additionally, safer paralleling operation is produced by the positive VCE(sat) temperature coefficient and extremely narrow parameter distribution.
STGB40V60F Features
-
Maximum junction temperature: TJ = 175 °C
-
Tail-less switching off
-
VCE(sat) = 1.8 V (typ.) @ IC = 40 A
-
Tight parameters distribution
-
Safe paralleling
-
Low thermal resistance
STGB40V60F Applications
-
Welding
-
Power factor correction
-
UPS
-
Solar inverters
-
Chargers
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