STGB30V60DF

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Mount :

Surface Mount

Base Part Number :

STGB30

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

600V

Terminal Form :

Gull wing

Case Connection :

COLLECTOR

Input Type :

Standard

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Switching Energy :

383μJ (on), 233μJ (off)

Turn Off Time-Nom (toff) :

225 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Breakdown Voltage :

600V

Power - Max :

258W

ECCN Code :

EAR99

Max Collector Current :

60A

Gate Charge :

163nC

Polarity/Channel Type :

N-Channel

Turn On Time :

59 ns

Transistor Application :

POWER CONTROL

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IGBT Type :

Trench Field Stop

Number of Elements :

1

Mounting Type :

Surface Mount

Reverse Recovery Time :

53 ns

Factory Lead Time :

20 Weeks

Collector Emitter Saturation Voltage :

1.85V

Td (on/off) @ 25°C :

45ns/189ns

Packaging :

Cut Tape (CT)

Weight :

2.240009g

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Test Condition :

400V, 30A, 10 Ω, 15V

Element Configuration :

Single

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 30A

Collector Emitter Breakdown Voltage :

600V

Current - Collector Pulsed (Icm) :

120A

Gate-Emitter Voltage-Max :

20V

Max Power Dissipation :

258W