STGB30NC60KT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Current - Collector Pulsed (Icm) :

125A

Terminal Form :

Gull wing

Turn Off Time-Nom (toff) :

290 ns

Series :

PowerMESH™

Radiation Hardening :

No

Number of Elements :

1

Transistor Application :

POWER CONTROL

Pin Count :

4

Turn On Time :

41 ns

Base Part Number :

STGB30

Td (on/off) @ 25°C :

29ns/120ns

Switching Energy :

350μJ (on), 435μJ (off)

Pbfree Code :

yes

Max Collector Current :

60A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power - Max :

185W

Max Breakdown Voltage :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 20A

Turn On Delay Time :

29 ns

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Input Type :

Standard

Max Power Dissipation :

185W

Collector Emitter Voltage (VCEO) :

600V

Mounting Type :

Surface Mount

Number of Pins :

3

Gate-Emitter Thr Voltage-Max :

6.5V

Turn-Off Delay Time :

120 ns

Number of Terminations :

2

Collector Emitter Breakdown Voltage :

600V

RoHS Status :

ROHS3 Compliant

Gate Charge :

96nC

Mount :

Surface Mount

Test Condition :

480V, 20A, 10 Ω, 15V

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Gate-Emitter Voltage-Max :

20V

Polarity/Channel Type :

N-Channel

Element Configuration :

Single