STGB30M65DF2
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- Mfr.Part #
- STGB30M65DF2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 650V 30A D2PAK
- Stock
- 24,407
- In Stock ：
- 24,407
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Max Collector Current :
- 60A
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 30A
- ECCN Code :
- EAR99
- Packaging :
- Cut Tape (CT)
- Element Configuration :
- Single
- Td (on/off) @ 25°C :
- 31.6ns/115ns
- Max Breakdown Voltage :
- 650V
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- IGBT Type :
- Trench Field Stop
- Operating Temperature :
- -55°C~175°C TJ
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 258W
- Base Part Number :
- STGB30
- Mount :
- Surface Mount
- Reverse Recovery Time :
- 140 ns
- RoHS Status :
- ROHS3 Compliant
- Input Type :
- Standard
- Max Power Dissipation :
- 258W
- Collector Emitter Voltage (VCEO) :
- 2V
- Mounting Type :
- Surface Mount
- Switching Energy :
- 300μJ (on), 960μJ (off)
- Collector Emitter Saturation Voltage :
- 1.55V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Collector Emitter Breakdown Voltage :
- 650V
- Test Condition :
- 400V, 30A, 10 Ω, 15V
- Current - Collector Pulsed (Icm) :
- 120A
- Gate Charge :
- 80nC
- Factory Lead Time :
- 30 Weeks
- Datasheets
- STGB30M65DF2
STGB30M65DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGB30M65DF2 Description
The STGB30M65DF2 is an IGBT that was created using a proprietary trench gate field-stop topology. The STGB30M65DF2 is part of the M family of IGBTs, which provide the best blend of performance and efficiency in inverter systems where low-loss and short-circuit functionality are critical. In addition, the positive VCE(sat) temperature coefficient and narrow parameter distribution make paralleling safer.
STGB30M65DF2 Features
-
Short-circuit withstand time of 6 seconds
-
@ IC = 30 A, VCE(sat) = 1.55 V (typ.)
-
a tight distribution of parameters
-
Paralleling is safer, and the thermal resistance is lower.
-
Antiparallel diode with a soft and quick recovery time
STGB30M65DF2 Applications
-
Motor control
-
UPS
-
PFC
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