STGB30H60DLFB
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- Mfr.Part #
- STGB30H60DLFB
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRENCH GATE FIELD-STOP IGBT, HB
- Stock
- 45,285
- In Stock ：
- 45,285
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Current - Collector Pulsed (Icm) :
- 120A
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 20 Weeks
- Max Breakdown Voltage :
- 600V
- Max Power Dissipation :
- 260W
- Input Type :
- Standard
- Gate-Emitter Thr Voltage-Max :
- 7V
- Collector Emitter Voltage (VCEO) :
- 2V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Gate Charge :
- 149nC
- Gate-Emitter Voltage-Max :
- 20V
- IGBT Type :
- Trench Field Stop
- Switching Energy :
- 393μJ (off)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power - Max :
- 260W
- Collector Emitter Breakdown Voltage :
- 600V
- Test Condition :
- 400V, 30A, 10 Ω, 15V
- Max Collector Current :
- 60A
- Td (on/off) @ 25°C :
- -/146ns
- Base Part Number :
- STGB30
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 30A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Datasheets
- STGB30H60DLFB
STGB30H60DLFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGB30H60DLFB Description
These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STGB30H60DLFB Features
? Designed for soft commutation only
? Maximum junction temperature: TJ = 175 °C
? High speed switching series
? Minimized tail current
? VCE(sat) = 1.55 V (typ.) @ IC = 30 A
? Low VF soft recovery co-packaged diode
? Tight parameters distribution
? Safe paralleling
? Low thermal resistance
? Lead free package
STGB30H60DLFB Applications
? Microwave oven
? Resonant converters
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