STGB30H60DFB

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Case Connection :

COLLECTOR

Test Condition :

400V, 30A, 10 Ω, 15V

Factory Lead Time :

20 Weeks

Turn On Time :

51.1 ns

Number of Terminations :

2

Max Collector Current :

60A

Td (on/off) @ 25°C :

37ns/146ns

Terminal Form :

Gull wing

Terminal Position :

Single

Number of Elements :

1

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 30A

ECCN Code :

EAR99

Input Type :

Standard

Collector Emitter Voltage (VCEO) :

2V

Switching Energy :

383μJ (on), 293μJ (off)

Transistor Application :

POWER CONTROL

Gate Charge :

149nC

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Current - Collector Pulsed (Icm) :

120A

Mount :

Surface Mount

Max Power Dissipation :

260W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn Off Time-Nom (toff) :

223 ns

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Reverse Recovery Time :

53 ns

Collector Emitter Breakdown Voltage :

600V

Power - Max :

260W

Polarity/Channel Type :

N-Channel

IGBT Type :

Trench Field Stop

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Base Part Number :

STGB30

Max Breakdown Voltage :

600V