STGB20V60F
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- Mfr.Part #
- STGB20V60F
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 600V 40A 167W D2PAK
- Stock
- 38,322
- In Stock ：
- 38,322
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Input Type :
- Standard
- Collector Emitter Breakdown Voltage :
- 600V
- Width :
- 9.35mm
- Collector Emitter Voltage (VCEO) :
- 600V
- Power - Max :
- 167W
- Current - Collector Pulsed (Icm) :
- 80A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Breakdown Voltage :
- 600V
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Switching Energy :
- 200μJ (on), 130μJ (off)
- ECCN Code :
- EAR99
- Gate Charge :
- 116nC
- Number of Pins :
- 3
- Weight :
- 2.000002g
- Td (on/off) @ 25°C :
- 38ns/149ns
- Height :
- 4.6mm
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Surface Mount
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Cut Tape (CT)
- Length :
- 10.4mm
- Collector Emitter Saturation Voltage :
- 1.8V
- Factory Lead Time :
- 20 Weeks
- Max Power Dissipation :
- 167W
- Test Condition :
- 400V, 20A, 15V
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 20A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Base Part Number :
- STGB20
- Max Collector Current :
- 40A
- IGBT Type :
- Trench Field Stop
- Datasheets
- STGB20V60F
STGB20V60F datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGB20V60F Description
An IGBT called the STGB20V60F was created employing a cutting-edge, proprietary trench gate and field stop construction. The item belongs to the "V" family of IGBTs, which offer the best conduction and switching loss trade-offs for maximizing the efficiency of very high frequency converters. Additionally, safer paralleling operation is produced by a positive VCE(sat)temperature coefficient and a very narrow parameter distribution.
STGB20V60F Features
-
Safe paralleling
-
Tail-less switching off
-
Low thermal resistance
-
Tight parameters distribution
-
Very high speed switching series
-
Maximum junction temperature: TJ = 175 °C
-
Lead Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 Afree package
STGB20V60F Applications
-
Automotive
-
Enterprise systems
-
Personal electronics
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