STGB20M65DF2

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Mfr.Part #
STGB20M65DF2
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
IGBT TRENCH 650V 40A D2PAK
Stock
190,440
In Stock :
190,440

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Gate Charge :
63nC
Base Part Number :
STGB20
Current - Collector (Ic) (Max) :
40A
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reverse Recovery Time :
166ns
Voltage - Collector Emitter Breakdown (Max) :
650V
Mounting Type :
Surface Mount
Input Type :
Standard
Packaging :
Tape and Reel (TR)
Factory Lead Time :
30 Weeks
Current - Collector Pulsed (Icm) :
80A
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 20A
Td (on/off) @ 25°C :
26ns/108ns
IGBT Type :
Trench Field Stop
RoHS Status :
ROHS3 Compliant
Switching Energy :
140μJ (on), 560μJ (off)
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Series :
M
Test Condition :
400V, 20A, 12 Ω, 15V
Power - Max :
166W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-55°C~175°C TJ
Datasheets
STGB20M65DF2
Introducing Transistors - IGBTs - Single STMicroelectronics STGB20M65DF2 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STGB20, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, STGB20M65DF2 pinout, STGB20M65DF2 datasheet PDF, STGB20M65DF2 amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGB20M65DF2 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGB20M65DF2


STGB20M65DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGB20M65DF2 Description


STGB20M65DF2 is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate and field stop structure. It is able to provide low conduction and switching losses, which maximize the efficiency of very high-frequency converters. Safer paralleling operation can be achieved due to its positive VCE(sat) temperature coefficient and very tight parameter distribution.



STGB20M65DF2 Features


Advanced proprietary trench gate and field stop structure

Low conduction and switching losses

Positive VCE(sat) temperature coefficient 

Very tight parameter distribution

Package:  D2PAK



STGB20M65DF2 Applications


Motor control

UPS

PFC

General-purpose inverters


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