STGB19NC60WT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Gate-Emitter Thr Voltage-Max :

5.75V

Td (on/off) @ 25°C :

25ns/90ns

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

245

Series :

PowerMESH™

Turn Off Time-Nom (toff) :

204 ns

Max Breakdown Voltage :

600V

Mount :

Surface Mount

Test Condition :

390V, 12A, 10 Ω, 15V

Operating Temperature :

-65°C~150°C TJ

Radiation Hardening :

No

Mounting Type :

Surface Mount

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 12A

Collector Emitter Voltage (VCEO) :

600V

Transistor Application :

Motor Control

Pin Count :

4

Max Power Dissipation :

130W

Number of Elements :

1

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Gate-Emitter Voltage-Max :

20V

Gate Charge :

53nC

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Time :

33 ns

Pbfree Code :

yes

Terminal Finish :

Matte Tin (Sn) - annealed

Power - Max :

130W

Element Configuration :

Single

Number of Pins :

3

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

600V

Number of Terminations :

2

JESD-609 Code :

e3

Base Part Number :

STGB19

Switching Energy :

81μJ (on), 125μJ (off)

Max Collector Current :

40A

Input Type :

Standard

JESD-30 Code :

R-PSSO-G2