STGB19NC60KT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Pin Count :

4

Packaging :

Tape and Reel (TR)

Gate-Emitter Voltage-Max :

20V

Turn On Time :

38 ns

Element Configuration :

Single

Number of Elements :

1

Lead Free :

Lead Free

Number of Terminations :

2

Max Collector Current :

35A

Transistor Application :

POWER CONTROL

JESD-30 Code :

R-PSSO-G2

Gate Charge :

55nC

Switching Energy :

165μJ (on), 255μJ (off)

Max Power Dissipation :

125W

Mounting Type :

Surface Mount

Current - Collector Pulsed (Icm) :

75A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

Turn Off Time-Nom (toff) :

270 ns

Collector Emitter Breakdown Voltage :

600V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

STGB19

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

30 ns

Input Type :

Standard

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

245

Series :

PowerMESH™

Test Condition :

480V, 12A, 10 Ω, 15V

Gate-Emitter Thr Voltage-Max :

6.5V

Power Dissipation :

125W

Collector Emitter Voltage (VCEO) :

600V

Max Breakdown Voltage :

600V

Vce(on) (Max) @ Vge, Ic :

2.75V @ 15V, 12A

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Td (on/off) @ 25°C :

30ns/105ns

Mount :

Surface Mount

Turn-Off Delay Time :

125 ns

Terminal Form :

Gull wing