STD6NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

40 ns

Power Dissipation-Max :

45W Tc

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

4.6A

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

920m Ω @ 2.3A, 10V

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

45W

Resistance :

920mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Series :

MDmesh™ II

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 50V

Current - Continuous Drain (Id) @ 25°C :

4.6A Tc

Mount :

Surface Mount

Rise Time :

8ns

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Reach Compliance Code :

not_compliant

Avalanche Energy Rating (Eas) :

65 mJ

JESD-609 Code :

e3

Vgs (Max) :

±25V

Fall Time (Typ) :

9 ns

Drain to Source Breakdown Voltage :

600V

FET Type :

N-Channel

Base Part Number :

STD6N