STD60NH03LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Additional Feature :

LOW THRESHOLD

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 5V

Pin Count :

3

Reach Compliance Code :

not_compliant

Series :

STripFET™ III

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

240A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

9m Ω @ 30A, 10V

Turn-Off Delay Time :

19 ns

Drain to Source Breakdown Voltage :

30V

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Voltage - Rated DC :

30V

Vgs(th) (Max) @ Id :

1V @ 250μA

Power Dissipation-Max :

70W Tc

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

300 mJ

Mount :

Surface Mount

Case Connection :

DRAIN

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-252AA

Continuous Drain Current (ID) :

60A

Fall Time (Typ) :

15 ns

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Power Dissipation :

70W

Qualification Status :

Not Qualified

Base Part Number :

STD60N

Current Rating :

60A

Rise Time :

95ns

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.017Ohm

Mounting Type :

Surface Mount