STD60N3LH5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

60W Tc

Fall Time (Typ) :

4.2 ns

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Terminal Form :

Gull wing

Width :

6.2mm

JESD-609 Code :

e3

Rise Time :

33ns

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

48A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Turn On Delay Time :

6 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On (Max) @ Id, Vgs :

8m Ω @ 24A, 10V

Height :

2.4mm

Power Dissipation :

60W

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Resistance :

8mOhm

Series :

STripFET™ V

Turn-Off Delay Time :

19 ns

Continuous Drain Current (ID) :

24A

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

FET Type :

N-Channel

Threshold Voltage :

1.8V

Base Part Number :

STD60N

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

22V

Packaging :

Tape and Reel (TR)

Additional Feature :

ULTRA-LOW RESISTANCE

Case Connection :

DRAIN

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

8.8nC @ 5V

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - annealed

ECCN Code :

EAR99

Length :

6.6mm

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1