STD65N55LF3
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- Mfr.Part #
- STD65N55LF3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 80A DPAK
- Stock
- 10,770
- In Stock ：
- 10,770
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Additional Feature :
- LOW THRESHOLD
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Mount :
- Surface Mount
- Series :
- STripFET™ III
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 2200pF @ 25V
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 25ns
- JESD-609 Code :
- e3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -55°C~175°C TJ
- Base Part Number :
- STD65N
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 32A, 10V
- Resistance :
- 7mOhm
- Fall Time (Typ) :
- 10 ns
- Power Dissipation-Max :
- 110W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- FET Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 50 ns
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Drain to Source Breakdown Voltage :
- 55V
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 10 ns
- Power Dissipation :
- 110W
- Continuous Drain Current (ID) :
- 80A
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Datasheets
- STD65N55LF3
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N-Channel Tape & Reel (TR) 8.5m Ω @ 32A, 10V ±20V 2200pF @ 25V 20nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
STD65N55LF3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2200pF @ 25V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.Using VGS=55V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 55V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
STD65N55LF3 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 50 ns
STD65N55LF3 Applications
There are a lot of STMicroelectronics
STD65N55LF3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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