STD65NF06

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

110W

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

60V

FET Type :

N-Channel

Turn On Delay Time :

15 ns

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Rise Time :

60ns

Fall Time (Typ) :

16 ns

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Terminal Form :

Gull wing

Case Connection :

DRAIN

Turn-Off Delay Time :

40 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

240A

Power Dissipation-Max :

110W Tc

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Base Part Number :

STD65N

Vgs (Max) :

±20V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Series :

STripFET™ II

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.014Ohm

Terminal Finish :

MATTE TIN

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Pin Count :

3

ECCN Code :

EAR99

Continuous Drain Current (ID) :

60A

Element Configuration :

Single