STD65N3LLH5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Mount :

Surface Mount

Power Dissipation :

50W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0097Ohm

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

6.9m Ω @ 32.5A, 10V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

22V

Current - Continuous Drain (Id) @ 25°C :

65A Tc

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1290pF @ 25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Rise Time :

11.2ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Series :

STripFET™ V

Number of Terminations :

2

Additional Feature :

ULTRA-LOW RESISTANCE

Power Dissipation-Max :

50W Tc

Number of Elements :

1

Fall Time (Typ) :

6 ns

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

260A

Continuous Drain Current (ID) :

65A

Vgs (Max) :

±22V

Turn-Off Delay Time :

32.4 ns

Drain to Source Breakdown Voltage :

30V

Manufacturer Package Identifier :

Figure 19

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Gull wing

Base Part Number :

STD65N