STD6N52K3
- Mfr.Part #
- STD6N52K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 525V 5A DPAK
- Stock
- 13,556
- In Stock :
- 13,556
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 31 ns
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Power Dissipation :
- 70W
- Pulsed Drain Current-Max (IDM) :
- 20A
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 5A
- Drain to Source Breakdown Voltage :
- 525V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Resistance :
- 1.2Ohm
- Power Dissipation-Max :
- 70W Tc
- Factory Lead Time :
- 12 Weeks
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 18 ns
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Single
- Number of Terminations :
- 2
- Turn On Delay Time :
- 10 ns
- Base Part Number :
- STD6N
- Drain Current-Max (Abs) (ID) :
- 5A
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Rise Time :
- 11ns
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Radiation Hardening :
- No
- Vgs (Max) :
- ±30V
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 2.5A, 10V
- FET Type :
- N-Channel
- Series :
- SuperMESH3™
- Datasheets
- STD6N52K3
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N-Channel Tape & Reel (TR) 1.2 Ω @ 2.5A, 10V ±30V TO-252-3, DPak (2 Leads + Tab), SC-63
STD6N52K3 Overview
This device's continuous drain current (ID) is 5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 525V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 5A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 31 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 20A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).
STD6N52K3 Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 525V voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 20A.
STD6N52K3 Applications
There are a lot of STMicroelectronics
STD6N52K3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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