STD6NM60N-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

9 ns

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

65 mJ

Power Dissipation :

45W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STD6N

Packaging :

Tube

Power Dissipation-Max :

45W Tc

Vgs (Max) :

±25V

Turn-Off Delay Time :

40 ns

Rise Time :

8ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

4.6A

Number of Terminations :

3

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

25V

JESD-609 Code :

e3

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Series :

MDmesh™ II

Number of Elements :

1

Drain to Source Breakdown Voltage :

600V

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.92Ohm

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn)

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 50V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

18.4A

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

920m Ω @ 2.3A, 10V

Current - Continuous Drain (Id) @ 25°C :

4.6A Tc

Operating Temperature :

-55°C~150°C TJ