STD6NK50ZT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5.6A Tc

JESD-609 Code :

e3

Number of Terminations :

2

Element Configuration :

Single

Threshold Voltage :

3.75V

Mount :

Surface Mount

Terminal Form :

Gull wing

Lead Free :

Lead Free

Fall Time (Typ) :

23 ns

Turn On Delay Time :

12 ns

Resistance :

1.2Ohm

Gate Charge (Qg) (Max) @ Vgs :

24.6nC @ 10V

Current Rating :

5.6A

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Height :

2.4mm

Nominal Vgs :

3.75 V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Series :

SuperMESH™

Voltage - Rated DC :

500V

RoHS Status :

ROHS3 Compliant

Width :

6.2mm

Mounting Type :

Surface Mount

Rise Time :

23.5ns

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

500V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Base Part Number :

STD6N

Time@Peak Reflow Temperature-Max (s) :

30

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.8A, 10V

Length :

6.6mm

Vgs (Max) :

±30V

Power Dissipation :

90W

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

22.4A

Radiation Hardening :

No

Turn-Off Delay Time :

31 ns

Continuous Drain Current (ID) :

5.6A

Power Dissipation-Max :

90W Tc

JESD-30 Code :

R-PSSO-G2