STD6N95K5
- Mfr.Part #
- STD6N95K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 950V 9A DPAK
- Stock
- 5,364
- In Stock :
- 5,364
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 33 ns
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Rise Time :
- 12ns
- Turn On Delay Time :
- 12 ns
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e3
- Threshold Voltage :
- 4V
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Rds On (Max) @ Id, Vgs :
- 1.25 Ω @ 3A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain Current-Max (Abs) (ID) :
- 9A
- Power Dissipation :
- 90W
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 90 mJ
- JESD-30 Code :
- R-PSSO-G2
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Resistance :
- 1.25Ohm
- Terminal Form :
- Gull wing
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Series :
- SuperMESH5™
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 450pF @ 100V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 90W Tc
- Packaging :
- Cut Tape (CT)
- Base Part Number :
- STD6N
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Nominal Vgs :
- 4 V
- Drain to Source Breakdown Voltage :
- 950V
- Continuous Drain Current (ID) :
- 9A
- Fall Time (Typ) :
- 21 ns
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Factory Lead Time :
- 17 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Lead Free :
- Lead Free
- Datasheets
- STD6N95K5
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N-Channel Cut Tape (CT) 1.25 Ω @ 3A, 10V ±30V 450pF @ 100V 13nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD6N95K5 Description
The STD6N95K5 Power MOSFETs are designed utilizing MDmeshTM K5 technology based on a proprietary vertical structure that is based on an innovative proprietary design. Consequently, the on-resistance has been reduced dramatically, along with the gate charge, which is ultra-low for applications requiring high efficiency and power density.
STD6N95K5 Features
-
DPAK 950 V worldwide best RDS(on)
-
Worldwide best FOM (figure of merit)
-
Ultra low gate charge
-
100% avalanche tested
-
Zener-protected
STD6N95K5 Applications
-
Audio Amplifier Stages
-
Audio amplifier
-
The output of Microcontrollers to Drive Loads
-
Any Signal Amplification
-
Drive Load Under 500mA
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