STD6N90K5
- Mfr.Part #
- STD6N90K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 6A DPAK
- Stock
- 15,212
- In Stock :
- 15,212
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 110W Tc
- Drain to Source Voltage (Vdss) :
- 900V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Series :
- MDmesh™ K5
- Base Part Number :
- STD6N
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 3A, 10V
- Factory Lead Time :
- 17 Weeks
- Datasheets
- STD6N90K5
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N-Channel Tape & Reel (TR) 1.1 Ω @ 3A, 10V ±30V 900V TO-252-3, DPak (2 Leads + Tab), SC-63
STD6N90K5 Description
STD6N90K5 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a Drain to Source Voltage (Vdss) of 900V. Using cutting-edge proprietary vertical structure technology, MDmeshTM K5 technology was used to build this extremely high voltage N-channel Power MOSFET. As a result, on-resistance is drastically reduced, and ultra-low gate charges are produced for applications demanding a high level of efficiency and higher power density.
STD6N90K5 Features
-
Industry’s lowest RDS(on) x area
-
Industry’s best FoM (figure of merit)
-
Ultra-low gate charge
-
100% avalanche tested
-
Zener-protected
STD6N90K5 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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