STD6N80K5
- Mfr.Part #
- STD6N80K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 4.5A DPAK
- Stock
- 2,319
- In Stock :
- 2,319
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 30V
- Height :
- 2.52mm
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 7.5nC @ 10V
- FET Type :
- N-Channel
- Series :
- SuperMESH5™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Vgs (Max) :
- 30V
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 255pF @ 100V
- Factory Lead Time :
- 17 Weeks
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 28.5 ns
- Power Dissipation-Max :
- 85W Tc
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 16 ns
- Manufacturer Package Identifier :
- DPAK-0068772_type-E
- Packaging :
- Cut Tape (CT)
- Base Part Number :
- STD6N
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 4.5A
- Rds On (Max) @ Id, Vgs :
- 1.6 Ω @ 2A, 10V
- Power Dissipation :
- 85W
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A Tc
- Number of Channels :
- 1
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Max Junction Temperature (Tj) :
- 150°C
- Drain to Source Breakdown Voltage :
- 800V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Threshold Voltage :
- 3V
- Datasheets
- STD6N80K5
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N-Channel Cut Tape (CT) 1.6 Ω @ 2A, 10V 30V 255pF @ 100V 7.5nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD6N80K5 Description
STD6N80K5 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 500V. MDmeshTM K5 technology, based on an innovative patented vertical structure, was used to build these very high voltage N-channel Power MOSFETs. For applications needing great power density and efficiency, the outcome is a significant reduction in on-resistance and an ultra-low gate charge.
STD6N80K5 Features
-
Industry’s lowest RDS(on)
-
Industry’s best figure of merit (FoM)
-
Ultra low gate charge
-
100% avalanche tested
-
Zener-protected
STD6N80K5 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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