STB5N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Resistance :

1.6Ohm

Additional Feature :

ULTRA LOW-ON RESISTANCE

Current - Continuous Drain (Id) @ 25°C :

4.2A Tc

Threshold Voltage :

3.75V

Mount :

Surface Mount

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

620V

Continuous Drain Current (ID) :

4.2A

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Turn-Off Delay Time :

40 ns

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 50V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

SuperMESH3™

Rise Time :

8ns

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Number of Terminations :

2

Power Dissipation-Max :

70W Tc

Packaging :

Tape and Reel (TR)

Pin Count :

4

Lead Free :

Lead Free

Base Part Number :

STB5N

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Power Dissipation :

70W

Nominal Vgs :

3.75 V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

245

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 2.1A, 10V

ECCN Code :

EAR99

Fall Time (Typ) :

21 ns

FET Type :

N-Channel

Element Configuration :

Single

Turn On Delay Time :

12 ns

Terminal Finish :

Matte Tin (Sn) - annealed