STB5N52K3
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- Mfr.Part #
- STB5N52K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 525V 4.4A D2PAK
- Stock
- 5,712
- In Stock ：
- 5,712
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Power Dissipation :
- 70W
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Resistance :
- 1.5Ohm
- Number of Pins :
- 3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 545pF @ 100V
- Drain to Source Breakdown Voltage :
- 525V
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Series :
- SuperMESH3™
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Base Part Number :
- STB5N
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Turn On Delay Time :
- 9 ns
- Continuous Drain Current (ID) :
- 4.4A
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 2.2A, 10V
- Lead Free :
- Lead Free
- Rise Time :
- 11ns
- Fall Time (Typ) :
- 16 ns
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Tc
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 29 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 70W Tc
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- STB5N52K3
N-Channel Tape & Reel (TR) 1.5 Ω @ 2.2A, 10V ±30V 545pF @ 100V 17nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB5N52K3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 545pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4.4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=525V. And this device has 525V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 29 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STB5N52K3 Features
a continuous drain current (ID) of 4.4A
a drain-to-source breakdown voltage of 525V voltage
the turn-off delay time is 29 ns
STB5N52K3 Applications
There are a lot of STMicroelectronics
STB5N52K3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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