STB50NE10T4

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Mfr.Part #
STB50NE10T4
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 50A D2PAK
Stock
42,886
In Stock :
42,886

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-65°C~175°C TJ
Rise Time :
100ns
Turn-Off Delay Time :
45 ns
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
100V
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
50A
Voltage - Rated DC :
100V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Fall Time (Typ) :
35 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Power Dissipation :
180W
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material :
SILICON
Lead Free :
Lead Free
Qualification Status :
Not Qualified
JESD-30 Code :
R-PSSO-G2
Pbfree Code :
No
Number of Terminations :
2
Packaging :
Tape and Reel (TR)
Pulsed Drain Current-Max (IDM) :
200A
Terminal Finish :
Matte Tin (Sn)
Reach Compliance Code :
not_compliant
Transistor Application :
SWITCHING
Series :
STripFET™
Pin Count :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Single
Base Part Number :
STB50N
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
6000pF @ 25V
Case Connection :
DRAIN
Number of Elements :
1
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 250µA
Current Rating :
50A
Mount :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
166nC @ 10V
Mounting Type :
Surface Mount
Avalanche Energy Rating (Eas) :
300 mJ
ECCN Code :
EAR99
Power Dissipation-Max :
180W Tc
Drain-source On Resistance-Max :
0.027Ohm
Rds On (Max) @ Id, Vgs :
27m Ω @ 25A, 10V
Terminal Form :
Gull wing
Datasheets
STB50NE10T4
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB50NE10T4 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Base Part Number:STB50N, Mounting Type:Surface Mount, STB50NE10T4 pinout, STB50NE10T4 datasheet PDF, STB50NE10T4 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB50NE10T4 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB50NE10T4


N-Channel Tape & Reel (TR) 27m Ω @ 25A, 10V ±20V 6000pF @ 25V 166nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB50NE10T4 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 300 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6000pF @ 25V.This device conducts a continuous drain current (ID) of 50A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 45 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 200A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STB50NE10T4 Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 200A.


STB50NE10T4 Applications


There are a lot of STMicroelectronics
STB50NE10T4 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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