STB57N65M5
- Mfr.Part #
- STB57N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 42A D2PAK
- Stock
- 1,320
- In Stock :
- 1,320
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Part Number :
- STB57N
- Width :
- 9.35mm
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Series :
- MDmesh™ V
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 63m Ω @ 21A, 10V
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Rise Time :
- 15ns
- Gate to Source Voltage (Vgs) :
- 25V
- Max Junction Temperature (Tj) :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Resistance :
- 63mOhm
- Continuous Drain Current (ID) :
- 42A
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 100V
- JEDEC-95 Code :
- TO-220AB
- Avalanche Energy Rating (Eas) :
- 960 mJ
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±25V
- Factory Lead Time :
- 17 Weeks
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1
- Turn-Off Delay Time :
- 12 ns
- Fall Time (Typ) :
- 19 ns
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 250W Tc
- Drain to Source Breakdown Voltage :
- 650V
- Power Dissipation :
- 250W
- Mount :
- Surface Mount
- Height :
- 4.83mm
- Threshold Voltage :
- 4V
- Turn On Delay Time :
- 73 ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Peak Reflow Temperature (Cel) :
- 245
- Terminal Form :
- THROUGH-HOLE
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 10.4mm
- Operating Temperature :
- 150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer Package Identifier :
- D2PAK-0079457
- Datasheets
- STB57N65M5

N-Channel Tape & Reel (TR) 63m Ω @ 21A, 10V ±25V 4200pF @ 100V 98nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB57N65M5 N-Channel MOSFET Description
The STB57N65M5 N-Channel MOSFET is manufactured by STMicroelectronics. It's rated at 650 V and is offered with TO-220, TO-220FP, I2PAK, and D2PAK packages for different design requirements. It is capable of operating within -55~150 ℃. In all packages this MOSFET provides, a max Drain current can be guaranteed under 25 ℃ ambient temperature.
STB57N65M5 N-Channel MOSFET Features
-
100% avalanche tested
-
Easy to drive
-
Worldwide best RDS(on)*area among the silicon-based devices
-
Excellent switching performance
-
Higher VDSS rating, high dv/dt capability
STB57N65M5 N-Channel MOSFET Applications
-
Tone Control
-
Low Noise Applications
-
Robotics
-
Cameras
-
Toys
-
Noise Generators
-
Chopper Circuits
-
Consumer Electronics
-
Audio Signals Modulation
-
Medical
-
DSLR Lenses
-
Switching Application
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