STB55NF06LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

18m Ω @ 27.5A, 10V

Peak Reflow Temperature (Cel) :

245

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Element Configuration :

Single

Voltage - Rated DC :

60V

Rise Time :

100ns

FET Type :

N-Channel

Vgs (Max) :

±16V

Gate to Source Voltage (Vgs) :

16V

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STB55N

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 4.5V

Transistor Element Material :

SILICON

Threshold Voltage :

1.7V

Pulsed Drain Current-Max (IDM) :

220A

Lead Free :

Lead Free

Mount :

Surface Mount

Case Connection :

DRAIN

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Series :

STripFET™ II

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

55A

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Number of Elements :

1

Pin Count :

3

Resistance :

18mOhm

Width :

10.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

60V

Vgs(th) (Max) @ Id :

4.7V @ 250μA

Fall Time (Typ) :

20 ns

Factory Lead Time :

12 Weeks

Power Dissipation :

95W

Operating Temperature :

-55°C~175°C TJ

Length :

10.75mm

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

95W Tc

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Turn-Off Delay Time :

40 ns

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Turn On Delay Time :

20 ns

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V 5V

Transistor Application :

SWITCHING

Height :

4.6mm

Current Rating :

55A

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

JESD-609 Code :

e3

REACH SVHC :

No SVHC