STB55NF03LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Vgs (Max) :

±16V

Operating Temperature :

175°C TJ

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

16V

Input Capacitance (Ciss) (Max) @ Vds :

1265pF @ 25V

Number of Elements :

1

Series :

STripFET™

Rds On (Max) @ Id, Vgs :

13m Ω @ 27.5A, 10V

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Power Dissipation-Max :

80W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount :

Surface Mount

Threshold Voltage :

1V

JESD-609 Code :

e3

Fall Time (Typ) :

50 ns

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Drain-source On Resistance-Max :

0.02Ohm

Additional Feature :

LOGIC LEVEL COMPATIBLE

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

245

Transistor Element Material :

SILICON

Base Part Number :

STB55N

REACH SVHC :

No SVHC

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

55A

FET Type :

N-Channel

Rise Time :

400ns

Turn On Delay Time :

28 ns

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

25 ns

Pulsed Drain Current-Max (IDM) :

220A

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

80W

ECCN Code :

EAR99

Lifecycle Status :

NRND (Last Updated: 7 months ago)