STB55NF06T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Height :

4.6mm

Power Dissipation-Max :

110W Tc

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Pin Count :

3

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

27.5A

Rds On (Max) @ Id, Vgs :

18m Ω @ 27.5A, 10V

Terminal Finish :

Matte Tin (Sn) - annealed

Peak Reflow Temperature (Cel) :

245

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Number of Terminations :

2

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Base Part Number :

STB55N

Voltage - Rated DC :

60V

Turn-Off Delay Time :

36 ns

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

200A

Resistance :

18mOhm

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Series :

STripFET™ II

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Vgs (Max) :

±20V

Width :

9.35mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Radiation Hardening :

No

Threshold Voltage :

3V

Current Rating :

50A

Rise Time :

50ns

Power Dissipation :

110W

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Length :

10.4mm

Turn On Delay Time :

20 ns

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

15 ns

Number of Pins :

3