STB13007DT4
- Mfr.Part #
- STB13007DT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 400V 8A D2PAK
- Stock
- 3,181
- In Stock :
- 3,181
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 9V
- Collector Emitter Saturation Voltage :
- 3V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Breakdown Voltage :
- 400V
- Max Power Dissipation :
- 80W
- Height :
- 4.83mm
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 1A, 5A
- Collector Base Voltage (VCBO) :
- 700V
- Power Dissipation :
- 80W
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Factory Lead Time :
- 8 Weeks
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Manufacturer Package Identifier :
- TO-263-P011P6
- Max Junction Temperature (Tj) :
- 150°C
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 5A 5V
- Base Part Number :
- STB13007
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 245
- Collector Emitter Breakdown Voltage :
- 400V
- Max Collector Current :
- 8A
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 400V
- hFE Min :
- 8
- Pin Count :
- 4
- Current - Collector Cutoff (Max) :
- 100μA
- Current Rating :
- 8A
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-30 Code :
- R-PSSO-G2
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Number of Elements :
- 1
- Voltage - Rated DC :
- 400V
- Datasheets
- STB13007DT4

NPN 150°C TJ 100μA 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
STB13007DT4 Overview
This device has a DC current gain of 8 @ 5A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 3V.A VCE saturation (Max) of 3V @ 1A, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.This device has a current rating of 8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 400V volts can be used.A maximum collector current of 8A volts is possible.
STB13007DT4 Features
the DC current gain for this device is 8 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 5A
the emitter base voltage is kept at 9V
the current rating of this device is 8A
STB13007DT4 Applications
There are a lot of STMicroelectronics
STB13007DT4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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