STB100NF04T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Transistor Application :

SWITCHING

Power Dissipation :

300W

Pulsed Drain Current-Max (IDM) :

480A

Drain to Source Breakdown Voltage :

40V

REACH SVHC :

No SVHC

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 50A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

40V

FET Type :

N-Channel

JESD-609 Code :

e3

Continuous Drain Current (ID) :

120A

Power Dissipation-Max :

300W Tc

Base Part Number :

STB100N

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Resistance :

4.6mOhm

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Rise Time :

220ns

Length :

10.4mm

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

Peak Reflow Temperature (Cel) :

245

ECCN Code :

EAR99

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn) - annealed

Operating Mode :

ENHANCEMENT MODE

Series :

Automotive, AEC-Q101, STripFET™ II

Number of Pins :

3

Height :

4.6mm

Fall Time (Typ) :

50 ns

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

35 ns

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

80 ns

Termination :

SMD/SMT

Width :

9.35mm

Transistor Element Material :

SILICON

Nominal Vgs :

4 V

Pbfree Code :

yes

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2V