STB100N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Number of Terminations :

3

Power Dissipation-Max :

150W Tc

Operating Mode :

ENHANCEMENT MODE

Weight :

3.949996g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

100V

Rise Time :

40ns

Series :

DeepGATE™, STripFET™ VII

Number of Elements :

1

Vgs(th) (Max) @ Id :

4.5V @ 250μA

JEDEC-95 Code :

TO-220AB

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

27 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

8m Ω @ 40A, 10V

FET Type :

N-Channel

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.008Ohm

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

46 ns

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Base Part Number :

STB100N

Width :

9.35mm

Avalanche Energy Rating (Eas) :

400 mJ

Mounting Type :

Surface Mount

Terminal Form :

THROUGH-HOLE

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4369pF @ 50V

Fall Time (Typ) :

15 ns

ECCN Code :

EAR99

Height :

4.6mm

Continuous Drain Current (ID) :

80A

Length :

10.4mm

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

38 Weeks