STB100NF03L-03T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

3.2mOhm

Additional Feature :

LOGIC LEVEL COMPATIBLE

Continuous Drain Current (ID) :

100A

Voltage - Rated DC :

30V

ECCN Code :

EAR99

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

400A

REACH SVHC :

No SVHC

Vgs (Max) :

±16V

Gate Charge (Qg) (Max) @ Vgs :

88nC @ 5V

Element Configuration :

Single

Threshold Voltage :

1.7V

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

4

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Mounting Type :

Surface Mount

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Terminal Form :

Gull wing

Fall Time (Typ) :

95 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 50A, 10V

Turn-Off Delay Time :

115 ns

Rise Time :

315ns

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

1.7 V

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

35 ns

Base Part Number :

STB100N

Number of Terminations :

2

JESD-609 Code :

e3

Series :

STripFET™ III

Input Capacitance (Ciss) (Max) @ Vds :

6200pF @ 25V

Peak Reflow Temperature (Cel) :

245

Transistor Application :

SWITCHING

Power Dissipation-Max :

300W Tc

Current Rating :

100A

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation :

300W

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

16V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE