STB10N65K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Base Part Number :

STB10N6

Drain to Source Breakdown Voltage :

650V

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 25V

Continuous Drain Current (ID) :

10A

Turn-Off Delay Time :

44 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

ECCN Code :

EAR99

Rise Time :

14ns

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

14.5 ns

FET Type :

N-Channel

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

1 Ω @ 3.6A, 10V

Series :

SuperMESH3™

Mounting Type :

Surface Mount

Fall Time (Typ) :

35 ns

Power Dissipation-Max :

150W Tc

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Packaging :

Cut Tape (CT)

Mount :

Surface Mount