STB100NH02LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

60A

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Current Rating :

60A

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

100W Tc

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Number of Elements :

1

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Pin Count :

3

Turn-Off Delay Time :

50 ns

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

245

Additional Feature :

LOW THRESHOLD

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Rds On (Max) @ Id, Vgs :

6m Ω @ 30A, 10V

Case Connection :

DRAIN

Voltage - Rated DC :

24V

Element Configuration :

Single

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

2850pF @ 15V

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Terminal Form :

Gull wing

Fall Time (Typ) :

18 ns

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.006Ohm

Avalanche Energy Rating (Eas) :

600 mJ

Transistor Application :

SWITCHING

Rise Time :

75ns

Power Dissipation :

100W

Number of Pins :

3

Series :

STripFET™ III

Drain to Source Breakdown Voltage :

24V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

240A

Base Part Number :

STB100N