STB120NF10T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

13.607771g

Series :

STripFET™ II

Drain to Source Breakdown Voltage :

100V

Power Dissipation :

312W

Pulsed Drain Current-Max (IDM) :

480A

Contact Plating :

Tin

Element Configuration :

Single

Current Rating :

120A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

ECCN Code :

EAR99

Pin Count :

4

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

550 mJ

Base Part Number :

STB120N

Nominal Vgs :

4 V

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

110A

Voltage - Rated DC :

100V

Gate Charge (Qg) (Max) @ Vgs :

233nC @ 10V

Threshold Voltage :

4V

Lead Free :

Lead Free

Length :

10.4mm

Fall Time (Typ) :

68 ns

FET Type :

N-Channel

Number of Pins :

3

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

110A Tc

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 60A, 10V

Peak Reflow Temperature (Cel) :

245

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Dual Supply Voltage :

100V

Number of Elements :

1

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Width :

9.35mm

Turn On Delay Time :

25 ns

Turn-Off Delay Time :

132 ns

Rise Time :

90ns

Transistor Application :

SWITCHING

Height :

4.6mm

Termination :

SMD/SMT

Power Dissipation-Max :

312W Tc

Resistance :

10.5mOhm