SSM6N7002BFE,LM
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- Mfr.Part #
- SSM6N7002BFE,LM
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- MOSFET 2N-CH 60V 0.2A ES6
- Stock
- 21,216
- In Stock ：
- 21,216
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Operating Temperature :
- 150°C TJ
- Rds On (Max) @ Id, Vgs :
- 2.1 Ω @ 500mA, 10V
- Drain to Source Voltage (Vdss) :
- 60V
- Package / Case :
- SOT-563, SOT-666
- Number of Channels :
- 2
- RoHS Status :
- RoHS Compliant
- Drain to Source Breakdown Voltage :
- 60V
- Height :
- 550μm
- Input Capacitance (Ciss) (Max) @ Vds :
- 17pF @ 25V
- Width :
- 1.2mm
- Vgs(th) (Max) @ Id :
- 3.1V @ 250μA
- Length :
- 1.6mm
- FET Type :
- 2 N-Channel (Dual)
- Continuous Drain Current (ID) :
- 200mA
- Published :
- 2009
- Mount :
- Surface Mount
- Packaging :
- Cut Tape (CT)
- FET Feature :
- Logic Level Gate
- Factory Lead Time :
- 16 Weeks
- Gate to Source Voltage (Vgs) :
- 10V
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 150mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- SSM6N7002BFE,LM
SSM6N7002BFE,LM datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Toshiba Semiconductor and Storage stock available at
Toshiba Transistors - FETs, MOSFETs - Arrays SSM6N7002BFE,LM are a type of field-effect transistor (FET) that uses metal-oxide-semiconductor (MOS) technology. They are used in a variety of applications, including power management, signal processing, and switching. The SSM6N7002BFE,LM is a MOSFET 2N-CH 60V 0.2A ES6N. It has a maximum drain-source voltage of 60V, a maximum drain current of 0.2A, and a maximum gate-source voltage of 20V. It is designed for use in low-voltage, low-power applications. It is suitable for use in a variety of applications, including power management, signal processing, and switching.
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