SSM6J207FE,LF
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- Mfr.Part #
- SSM6J207FE,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 1.4A ES6
- Stock
- 21,794
- In Stock ：
- 21,794
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 30V
- Number of Channels :
- 1
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SOT-563, SOT-666
- Published :
- 2009
- Continuous Drain Current (ID) :
- 1.4A
- Vgs(th) (Max) @ Id :
- 2.6V @ 1mA
- Factory Lead Time :
- 12 Weeks
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Turn On Delay Time :
- 15 ns
- Current - Continuous Drain (Id) @ 25°C :
- 1.4A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 137pF @ 15V
- Number of Pins :
- 6
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- FET Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 251m Ω @ 650mA, 10V
- Operating Temperature :
- 150°C TJ
- Turn-Off Delay Time :
- 14 ns
- Power Dissipation-Max :
- 500mW Ta
- Series :
- U-MOSII
- Datasheets
- SSM6J207FE,LF
P-Channel Tape & Reel (TR) 251m Ω @ 650mA, 10V ±20V 137pF @ 15V 30V SOT-563, SOT-666
SSM6J207FE,LF Overview
A device's maximum input capacitance is 137pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.4A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 14 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4V 10V) to reduce its overall power consumption.
SSM6J207FE,LF Features
a continuous drain current (ID) of 1.4A
the turn-off delay time is 14 ns
a 30V drain to source voltage (Vdss)
SSM6J207FE,LF Applications
There are a lot of Toshiba Semiconductor and Storage
SSM6J207FE,LF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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