SSM6J212FE,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

4A

Vgs(th) (Max) @ Id :

1V @ 1mA

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

14.1nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Drain to Source Voltage (Vdss) :

20V

Reach Compliance Code :

Unknown

Mounting Type :

Surface Mount

Power Dissipation-Max :

500mW Ta

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

970pF @ 10V

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

-20V

Packaging :

Tape and Reel (TR)

Published :

2009

Power Dissipation :

500mW

Factory Lead Time :

12 Weeks

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Rds On (Max) @ Id, Vgs :

40.7m Ω @ 3A, 4.5V

Series :

U-MOSVI

Package / Case :

SOT-563, SOT-666

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

ECCN Code :

EAR99

Vgs (Max) :

±8V